TSH110ILT Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

TSH110ILT

Wide band low noise operational amplifiers

STMicroelectronics 

Electrical characteristics

TSH110-TSH111-TSH112-TSH113-TSH114

Table 3.

Dual supply voltage, VCC= ±2.5V, Rfb(1)= 680Ω, Tamb = 25°C (unless otherwise

specified) (continued)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Tr Rise time

Tf Fall time

Ov Overshoot

St Settling time @ 0.05%

ΔG Differential gain

Δφ Differential phase

9

ns

for 200mV step

9

ns

AVCL=+2, Rfb(1)=820Ω//2pF

Load=100Ω

16

%

60

ns

AVCL=+2, RL=100Ω

F=4.5MHz, Vout=1Vpeak

0.05

%

0.05

°

Noise and harmonic performance

en Equivalent input voltage noise

in Equivalent input current noise

THD Total harmonic distortion

IM3 Third order inter modulation product

Frequency : 1MHz

AVCL=+2, F=2MHz

RL=100Ω

Vout=2Vpeak

AVCL=+2, Vout=2Vpp

RL=100Ω

F1=1MHz, F2=1.1MHz

@900kHz

@1.2MHz

@3.1MHz

@3.2MHz

3

nV/√Hz

8.5

pA/√Hz

64.4

dB

90

dBc

90

86

83

Matching characteristics

Gf Gain flatness

Vo1/Vo2 Channel separation

F=(DC) to 6MHz

AVCL=+2, Vout=2Vpp

F=1MHz to 10MHz

0.1

dB

65

dB

1. Rfb is the feedback resistance between the output and the inverting input of the amplifier.

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