TSH110ILT Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

TSH110ILT

Wide band low noise operational amplifiers

STMicroelectronics 

TSH110-TSH111-TSH112-TSH113-TSH114

2

Electrical characteristics

Electrical characteristics

Table 3.

Symbol

Dual supply voltage, VCC= ±2.5V, Rfb(1)= 680Ω, Tamb = 25°C (unless otherwise

specified)

Parameter

Test conditions

Min. Typ. Max. Unit

DC performance

Vio

ΔVio

Iib+

Iib-

ROL

ICC

CMR

SVR

PSR

Input offset voltage

Tamb

Tmin < Tamb < Tmax

Input offset voltage drift vs. temperature Tmin < Tamb < Tmax

Non inverting input bias current

Tamb

Tmin < Tamb < Tmax

Inverting input bias current

Tamb

Tmin < Tamb < Tmax

Transimpedance

RL=100Ω

Supply current per operator

Tamb

Tmin < Tamb < Tmax

Common mode rejection ratio

(ΔVic/ΔVio)

Supply voltage rejection ratio

(ΔVCC/ΔVio)

Power supply rejection ratio

(ΔVCC/ΔVout)

Gain=1, Rload=3.9kΩ

Dynamic performance and output characteristics

-1.5 0.3 2.0 mV

1

mV

5

μV/°C

-10 1.4 13

μA

2.5

μA

-3 1.9 7

μA

2.5

μA

500 750

kΩ

3.2 4

mA

3.5

mA

56 60

dB

70 80

dB

48

dB

Voh High level output voltage

Vol Low level output voltage

| Isink | Output sink current

Isource Output source current

BW -3dB bandwidth

SR Slew rate

Tamb

RL = 100Ω

1.4 2

Tmin < Tamb < Tmax

RL = 100Ω GND

1.9

Tamb

RL = 100Ω

-1.8 -1.3

Tmin < Tamb < Tmax

RL = 100Ω

-1.7

Tmin < Tamb < Tmax

20

Tmin < Tamb < Tmax

18

Vout=1Vpk, Rfb(1)=820Ω//2pF

Load=100Ω

AVCL=+2

AVCL=+2, 2V step

Load=100Ω

81

160 230

V

V

V

V

mA

mA

MHz

V/μs

3/15

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