TSH114ID(2002) Ver la hoja de datos (PDF) - STMicroelectronics
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TSH114ID Datasheet PDF : 19 Pages
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TSH110-TSH111-TSH112-TSH113-TSH114
ELECTRICAL CHARACTERISTICS (pages 3 and 4)
Dual Supply Voltage, VCC= ±2.5Volts, R*fb = 680Ω, Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Test Condition
Min. Typ. Max.
DC PERFORMANCE
Vio Input Offset Voltage
Tamb
Tmin. < Tamb < Tmax.
-1.5 0.3 2.0
1
∆Vio Input Offset Voltage Drift vs. Temperature Tmin. < Tamb < Tmax.
5
Iib+ Non Inverting Input Bias Current
Tamb
Tmin. < Tamb < Tmax.
-10 1.4 13
2.5
Iib- Inverting Input Bias Current
Tamb
Tmin. < Tamb < Tmax.
-3
1.9
7
2.5
ROL Transimpedance
RL=100Ω
500 750
ICC Supply Current per Operator
Tamb
Tmin. < Tamb < Tmax.
3.2
4
3.5
CMR
Common Mode Rejection Ratio
(∆Vic/∆Vio)
56 60
SVR
Supply Voltage Rejection Ratio
(∆VCC/∆Vio)
70 80
PSR
Power Supply Rejection Ratio
(∆VCC/∆Vout)
Gain=1, Rload=3.9kΩ
48
DYNAMIC PERFORMANCE and OUTPUT CHARACTERISTICS
Voh High Level Output Voltage
Tamb
RL = 100Ω
Tmin. < Tamb < Tmax.
RL = 100Ω GND
1.4
2
1.9
Vol Low Level Output Voltage
Tamb
RL = 100Ω
Tmin. < Tamb < Tmax.
RL = 100Ω
-1.8 -1.3
-1.7
| Isink | Output Sink current
Tmin. < Tamb < Tmax.
20
Isource Output Source current
Tmin. < Tamb < Tmax.
18
Vout=1Vpk, Rfb*=820Ω//2pF
BW -3dB Bandwidth
Load=100Ω
AVCL=+2
81
SR Slew Rate
AVCL=+2, 2V step
Load=100Ω
160 230
Tr Rise Time
Tf Fall Time
Ov Overshoot
St Settling Time @ 0.05%
for 200mV step
9
9
AVCL=+2, Rfb*=820Ω//2pF
16
Load=100Ω
60
∆G Differential gain
∆φ Differential phase
AVCL=+2, RL=100Ω
F=4.5MHz, Vout=1Vpeak
0.05
0.05
Unit
mV
mV
µV/°C
µA
µA
µA
µA
kΩ
mA
mA
dB
dB
dB
V
V
V
V
mA
mA
MHz
V/µs
ns
ns
%
ns
%
°
3/19
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