PBSS3515VS Ver la hoja de datos (PDF) - Philips Electronics
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PBSS3515VS Datasheet PDF : 12 Pages
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Philips Semiconductors
15 V low VCEsat PNP double transistor
Product specification
PBSS3515VS
600
handbook, halfpage
hFE
(1)
400
(2)
200
(3)
MLD649
0
−10−1
−1
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
handb−o1o2k,0h0alfpage
VBE
(mV)
−1000
−800
−600
−400
MLD651
(1)
(2)
(3)
−20−010−1
−1
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−10
−102
−103
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−103
handbook, halfpage
VCEsat
(mV)
−102
−10
MLD653
(2) (1)
(3)
−−110−1
−1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
handb−o1o2k,0h0alfpage
VBEsat
(mV)
−1000
−800
−600
−400
MLD652
(1)
(2)
(3)
−20−010−1
−1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
5
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