PBSS2515 Ver la hoja de datos (PDF) - Philips Electronics
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PBSS2515 Datasheet PDF : 12 Pages
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Philips Semiconductors
15 V low VCEsat NPN double transistor
Product specification
PBSS2515VS
600
handbook, halfpage
(1)
hFE
400
(2)
200
(3)
MLD643
0
10−1
1
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
1200
handbook, halfpage
VBE
(mV)
1000
800
600
400
MLD645
(1)
(2)
(3)
20010−1
1
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102
103
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
103
handbook, halfpage
VCEsat
(mV)
102
(1)
(2)
10
(3)
MLD647
110−1
1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
handbook, halfpage
VBEsat
(mV)
1000
800
600
400
MLD646
(1)
(2)
(3)
20010−1
1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
5
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