PBSS2515 Ver la hoja de datos (PDF) - Philips Electronics
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PBSS2515 Datasheet PDF : 12 Pages
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Philips Semiconductors
15 V low VCEsat NPN double transistor
Product specification
PBSS2515VS
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified
ICBO
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBE
fT
Cc
collector-base cut-off current VCB = 15 V; IE = 0
−
−
100 nA
VCB = 15 V; IE = 0; Tj = 150 °C
−
−
50
µA
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100 nA
DC current gain
VCE = 2 V; IC = 10 mA
200 −
−
VCE = 2 V; IC = 100 mA; note 1
150 −
−
VCE = 2 V; IC = 500 mA; note 1
90
−
−
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
IC = 200 mA; IB = 10 mA
−
−
25
mV
−
−
150 mV
IC = 500 mA; IB = 50 mA; note 1
−
−
250 mV
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
−
300 <500 mΩ
base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1
−
−
1.1 V
base-emitter turn-on voltage
VCE = 2 V; IC = 100 mA; note 1
−
−
0.9 V
transition frequency
IC = 100 mA; VCE = 5 V; f = 100 MHz 250 420 −
MHz
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1MHz
−
4.4 6
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Nov 07
4
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