PBSS2515 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
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Fabricante
PBSS2515 Datasheet PDF : 12 Pages
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Philips Semiconductors
15 V low VCEsat NPN double transistor
Product specification
PBSS2515VS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor unless otherwise specified
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
Ptot
total power dissipation
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
MIN.
MAX.
UNIT
−
15
V
−
15
V
−
6
V
−
500
mA
−
1
A
−
100
mA
−
200
mW
−65
+150
°C
−
150
°C
65
+150
°C
−
300
mW
VALUE
416
UNIT
K/W
2001 Nov 07
3
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