PBSS2515 Ver la hoja de datos (PDF) - Philips Electronics

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PBSS2515

15 V low VCEsat NPN double transistor

Philips Electronics 

Philips Semiconductors

15 V low VCEsat NPN double transistor

Product specification

PBSS2515VS

FEATURES

• 300 mW total power dissipation

• Very small 1.6 x 1.2 mm ultra thin package

• Excellent coplanarity due to straight leads

• Low collector-emitter saturation voltage

• High current capability

• Improved thermal behaviour due to flat lead

• Replaces two SC-75/SC-89 packaged low VCEsat

transistors on same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCEO

ICM

RCEsat

collector-emitter voltage

peak collector current

equivalent on-resistance

MAX. UNIT

15

V

1

A

<500 mΩ

PINNING

PIN

1, 4

2, 5

6, 3

emitter

base

collector

DESCRIPTION

TR1; TR2

TR1; TR2

TR1; TR2

APPLICATIONS

• General purpose switching and muting

• Low frequency driver circuits

• LCD backlighting

handbook, halfpag6e

5

• Audio frequency general purpose amplifier applications

• Battery driven equipment (mobile phones, video

cameras and hand-held devices).

DESCRIPTION

NPN low VCEsat double transistor in a SOT666 plastic

package.

PNP complement: PBSS3515VS.

1

2

Top view

4

65 4

TR2

TR1

3

123

MAM447

MARKING

TYPE NUMBER

PBSS2515VS

MARKING CODE

N9

Fig.1 Simplified outline (SOT666) and symbol.

2001 Nov 07

2

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