0.8
1.0
0.6
0.4
1.5
2.0
3.0
4.0
0.2
5.0
800
700
900
f=
Zin
1000
MHz
Zo = 50 Ω
10
600
0 500 0.2
0.4 0.6 0.8 1.0 1.5 2.0 3.0 4.0 5.0 10
600
1000 700
f = 500 MHz
10
900 800
0.2
ZOL*
5.0
4.0
3.0
0.4
0.6
0.8
1.0
2.0
1.5
VCC = 19 V, Po = 3.5 W, Zo = 50 Ω
Figure 1. Series Equivalent Input/Output Impedance
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0 100 200 300 400 500 600 700 800 900 1000
Pin, INPUT POWER (mW)
Figure 2. Power Input versus Power Output
L1
VBIAS
RF IN
R1
C1
Z1
C2
L2
C6
Z2
L3
C7
C8
Z3
Z5
Z4
C3
L4
R2
Z6
C4
VCC = 19 Vdc
+
C9
C5
RF
OUT
C1, C3, C5, C6, C7
C2, C4
C9
L1
L2
L3
500 pF, ATC
0.8 – 10 pF, JFD
0.1 µF, 50 V, Ceramic
7T, 20 Gauge on 200 Mil Ferrite Toroid
8T, 20 Gauge, 100 Mil Dia.
11T, 20 Gauge, 100 Mil Dia.
L4
R1, R2
Z1
Z2
Z3, Z4
Z5
Z6
Figure 3. 1 GHz Test Circuit
8T, 20 Gauge on 275 Mil Ferrite Toroid
15 Ω, 1/4 Watt
50 Ω, Microstripline, ȏ = 0.110 λ
10 Ω, Microstripline, ȏ = 0.162 λ
50 Ω, Microstripline, ȏ = 0.052 λ
24 Ω, Microstripline, ȏ = 0.080 λ
50 Ω, Microstripline, ȏ = 0.125 λ
1.0 kΩ
VSUPPLY = 21.6 Vdc
VSUPPLY
2N2222
3 x 11 Ω
5W
VCC
TIP41
4.7 kΩ 2.7 kΩ
180 Ω
4.7 Ω
68 Ω
VBIAS
Figure 4. Bias Circuit
MOTOROLA RF DEVICE DATA
MRA1000–3.5L
3