T4312816A Ver la hoja de datos (PDF) - Taiwan Memory Technology

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Fabricante

T4312816A

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

Preliminary T4312816A

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Voltage on Any Pin Relative To Vss

VIN,VOUT

-1.0 to 4.6

V

Supply Voltage Relative To Vss

VDD,VDDQ

-1.0 to 4.6

V

Short circuit Output Current

Power Dissipation

Iout

50

mA

PD

1

W

Operating Temperature

TOPR

0 to +70

°C

Storage Temperature

Tstg

-55 to +150

°C

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

RECOMMENDED DC OPERATING CONDITIONS

(TA = 0 to +70°C, Voltage referenced to VSS=0V)

Parameter

Symbol

Min.

Typ

Max.

Supply Voltage

VDD,VDDQ

3.0

3.3

3.6

Input High Voltage

VIH

2.0

3.0

VDD+0.3V

Input Low Voltage

VIL

-0.3

0

0.8

Output logic high voltage

VOH

2.4

-

-

Output logic low voltage

VOL

-

-

0.4

Input leakage current

IIL

-1

-

1

Output leakage current

IOL

-1.5

-

1.5

Note : 1. Any input 0V ≤ VIN ≤ VDD+ 0.3V , all other pin are not under test = 0V.

2. Dout = disable, 0V ≤ VOUT ≤ VDD .

Unit

Notes

V

V

V

V IOH=-4mA

V

IOL=4mA

uA

1

uA

2

CAPACITANCE

(TA =25°C,VDD=3.3V, f = 1MHz)

Pin

Symbol

Min

Max

Unit

CLOCK

CCLK

2.5

4.0

pF

ADDRESS

CADD

2.5

5.0

pF

DQ0 ~ DQ15

COUT

4.0

6.5

pF

RAS,CAS,WE,CS,CKE,LDQM,

CIN

2.5

5.0

pF

UDQM

TM Technology Inc. reserves the right

P. 4

to change products or specifications without notice.

Publication Date: APR. 2003

Revision: 0.B

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