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Fabricante

SA910

Variable gain RF predriver amplifier

Philips Electronics 

Philips Semiconductors

Variable gain RF predriver amplifier

Product specification

SA910

PIN DESCRIPTIONS

Pin

No.

Mnemonic

Function

1

VCC1

Power supply for power sense loop and off-chip bias

2

VREF

Power sense reference voltage input

3

GND

Ground

4

RFIN

Pre-driver input

5

GND

Ground

6

GND

Ground

7

OUTLPF

Power sense detected output

8

GND

Ground

9

VC

Gain control input

10

VCC BIAS

Power supply for on-chip bias

11

OFFSET

External power amp bias offset adjustment

12

PWRUP

Power-up input

13

GND

Ground

14

RFOUT2

Pre-driver output (open collector)

15

GND

Ground

16

GND

Ground

17

RFOUT1

Output of first stage (open collector)

18

GND

Ground

19

BIASOUT

Output to bias external power amplifier stage

20

PSENSE

Power sense input

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

VCC1/VCCBIAS DC supply voltages

Voltage applied to any other pin1

PD

PIN

PDET

PL

Power dissipation

Input drive power

Input detect power

Load power

TSTG

Storage temperature range

NOTE:

1. Except RFOUT1 and RFOUT2 which can have 8V max.

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

VCC1/VCCBIAS Supply voltage

TA

Operating ambient temperature range

NOTE:

1. Rth = 75° c/w

RATING

-0.3 to +6.0

-0.3 to (VCC1 + 0.3)

1.0

5

20

500

-65 to +150

RATING

3 to 3.6

-40 to +85

UNITS

V

V

W

mW

mW

mW

°C

UNITS

V

°C

1997 Aug 12

6

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