HFA3128 Ver la hoja de datos (PDF) - Intersil
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HFA3128 Datasheet PDF : 13 Pages
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HFA3046, HFA3096, HFA3127, HFA3128
Absolute Maximum Ratings
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
Collector Current (100% Duty Cycle) . . . . . . 18.5mA at TJ = 150°C
34mA at TJ = 125°C
37mA at TJ = 110°C
Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C
Thermal Information
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
14 Ld SOIC Package (Note 1) . . . . . . . 120
N/A
16 Ld SOIC Package (Note 1) . . . . . . . 115
N/A
QFN Package (Notes 2, 3). . . . . . . . . .
57
10
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
3. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications TA = 25°C
PARAMETER
DC NPN CHARACTERISTICS
Collector to Base Breakdown
Voltage, V(BR)CBO
Collector to Emitter Breakdown
Voltage, V(BR)CEO
Collector to Emitter Breakdown
Voltage, V(BR)CES
Emitter to Base Breakdown
Voltage, V(BR)EBO
Collector-Cutoff-Current, ICEO
Collector-Cutoff-Current, ICBO
Collector to Emitter Saturation
Voltage, VCE(SAT)
Base to Emitter Voltage, VBE
DC Forward-Current Transfer
Ratio, hFE
Early Voltage, VA
Base to Emitter Voltage Drift
Collector to Collector Leakage
TEST CONDITIONS
IC = 100µA, IE = 0
IC = 100µA, IB = 0
IC = 100µA, Base Shorted to Emitter
IE = 10µA, IC = 0
VCE = 6V, IB = 0
VCB = 8V, IE = 0
IC = 10mA, IB = 1mA
IC = 10mA
IC = 10mA, VCE = 2V
IC = 1mA, VCE = 3.5V
IC = 10mA
DIE
SOIC, QFN
MIN TYP MAX MIN TYP MAX UNITS
12
18
-
12
18
-
V
8
12
-
8
12
-
V
10
20
-
10
20
-
V
5.5
6
-
5.5
6
-
V
-
2
100
-
2
100
nA
-
0.1
10
-
0.1
10
nA
-
0.3
0.5
-
0.3
0.5
V
-
0.85 0.95
-
0.85 0.95
V
40
130
-
40
130
-
20
50
-
-
-1.5
-
-
1
-
20
50
-
-1.5
-
1
-
V
-
mV/°C
-
pA
Electrical Specifications TA = 25°C
PARAMETER
TEST CONDITIONS
DYNAMIC NPN CHARACTERISTICS
Noise Figure
fT Current Gain-Bandwidth
Product
f = 1.0GHz, VCE = 5V,
IC = 5mA, ZS = 50Ω
IC = 1mA, VCE = 5V
IC = 10mA, VCE = 5V
DIE
SOIC, QFN
MIN TYP MAX MIN TYP MAX UNITS
-
3.5
-
-
5.5
-
-
8
-
-
3.5
-
dB
-
5.5
-
GHz
-
8
-
GHz
3
FN3076.13
December 21, 2005
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