MCMA110PD1600TB Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
MCMA110PD1600TB Datasheet PDF : 6 Pages
| |||
MCD95-14io1B
Thyristor
2500
105
VR = 0 V
2000
ITSM
1500
[A]
1000
50 Hz
80% VRRM
TVJ = 45°C
TVJ = 125°C
500
0.001 0.01
0.1
1
t [s]
Fig. 1 Surge overload current ITSM,
IFSM: Crest value, t: duration
I2t
[A2s]
TVJ = 45°C
TVJ = 125°C
104
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 2 I2t versus time (1-10 ms)
250
200
150
I TAVM
100
[A]
50
DC
180° sin
120°
60°
30°
0
0 25 50 75 100 125 150
TC [°C]
Fig. 3 Max. forward current
at case temperature
250
200
Ptot 150
[W] 100
50
DC
180° sin
120°
60°
30°
RthKA K/W
0.4
0.6
0.8
1
1.2
1.5
2
3
0
0
50
100 150
0
ITAVM, IFAVM [A]
50
100
Ta [°C]
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
100
tp = 30 µs
tp = 500 µs
PGM = 120 W
10
60 W
PGAV = 8 W
VG
[V]
1
0.1
IGD
0.01 0.1
IGT (TVJ = -40°C)
IGT (TVJ = 0°C)
IGT (TVJ = 25°C)
1
10
IG [A]
Fig. 5 Gate trigger characteristics
1000
800
Ptot 600
[W] 400
200
Circuit
B6
3x MCC95 or
3x MCD95
RthKA K/W
0.03
0.06
0.08
0.12
0.15
0.3
0.5
0
0
100 200 300
0
IdAVM [A]
50
100
150
Ta [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct
output current and ambient temperature
100
10
tgd
[μs]
1
TVJ = 25°C
limit
typ.
0.1
0.01
0.1
1
10
IG [A]
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c
Share Link: 