SV2010M Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

SV2010M

Rectifier Diode

Dynex Semiconductor 

SV20

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

Conditions

10ms half sine; T = 175oC

case

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase =175oC

VR = 0

Max. Units

3.2

kA

51.2 x 103 A2s

4.0

kA

80.0 x 103 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Rth(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

T

Virtual junction temperature

vj

Tstg

Storage temperature range

-

Mounting Torque

Conditions

dc

Mounting torque 15.0Nm

with mounting compound

Forward (conducting)

Reverse (blocking)

Min. Max. Units

-

0.23 oC/W

-

0.08 oC/W

-

175

oC

-

175

oC

-55 200

oC

12.0 15.0 Nm

CHARACTERISTICS

Symbol

Parameter

V

Forward voltage

FM

IRRM

Peak reverse current

QS

Total stored charge

IRM

Peak recovery current

trr

reverse recovery time

V

Threshold voltage

TO

r

Slope resistance

T

*Typical values.

Conditions

At 600A peak, T = 25oC

case

At VRRM, Tcase = 175oC

I

F

=

100A,

dI /dt

RR

=

20A/µs,

T

case

=

25˚C

At T = 175˚C

vj

At T = 175˚C

vj

Typ. Max. Units

-

1.4

V

-

20 mA

200* -

µC

70*

-

A

5.5*

-

µs

-

0.8

V

-

1.0 mΩ

2/7

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