TK1216K Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
TK1216K Datasheet PDF : 8 Pages
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TK12
DYNAMIC CHARACTERISTICS
Symbol
VTM
IRRM/IDRM
dV/dt
dI/dt
VT(TO)
rT
tgd
IL
I
H
Parameter
Conditions
Min.
Maximum on-state voltage
At 150A peak, Tcase = 25oC
-
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit
-
Rate of rise of on-state current
Gate source 20V, 20Ω
tr ≤ 0.5µs, Tj = 125˚C
Repetitive 50Hz -
Non-repetitive -
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
At Tvj = 125oC
-
At Tvj = 125oC
-
VD = 300V, IG = 1A, IT = 50A, dI/dt = 50A/µs,
dIG/dt = 1A/µs, Tj = 25oC
-
Tj = 25oC, VD = 12V
-
T = 25oC, V = 12V, I = 1A
-
j
D
TM
Max. Units
2.0
V
10 mA
200 V/µs
500 A/µs
800 A/µs
1.4
V
4.0 mΩ
1.5
µs
-
mA
50 mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
IGT
VGD
VFGM
V
FGN
VRGM
IFGM
PGM
P
G(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
VDRM = 12V, Tcase = 25oC, RL = 6Ω
VDRM = 12V, Tcase = 25oC, RL = 6Ω
At VDRM Tcase = 125oC, RL = 12Ω
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
-
Typ. Max. Units
-
3.0
V
-
125 mA
-
0.2
V
-
3.0
V
-
0.25
V
-
5
V
-
4
A
-
16
W
-
3
W
3/8
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