ACR44U08LE Ver la hoja de datos (PDF) - Dynex Semiconductor

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Fabricante

ACR44U08LE

Fast Turn-off Asymmetric Thyristor

Dynex Semiconductor 

ACR44U

SURGE RATINGS

Symbol

ITSM

I2t

Parameter

Surge (non-repetitive) forward current

I2t for fusing

Conditions

10ms half sine; T = 125oC

case

Max.

550

1500

Units

A

A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Mounting torque

Conditions

d.c.

Mounting torque 3.5Nm

with mounting compound

On-state (conducting)

Min. Max. Units

-

0.35 oC/W

-

0.25 oC/W

-

125

oC

-55 125

oC

3.5 4.0 Nm

DYNAMIC CHARACTERISTICS

Tcase = 125˚C unless otherwise stated.

Symbol

Parameter

Conditions

Typ. Max. Units

VTM

Maximum on-state voltage

At 100A peak, Tcase = 25oC

-

2.7

V

IRRM/IDRM Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125oC

- 20/10 mA

dV/dt

dI/dt

VT(TO)

Maximum linear rate of rise of off-state voltage

Rate of rise of on-state current

To VDRM Tj = 125oC, gate open circuit

From VDRM to 125A. Gate source 15V, 15Ω

t = 50ns

r

Threshold voltage

-

-

600* V/µs

-

2000 A/µs

-

1.5

V

r

On-state slope resistance

T

-

-

13.3 mΩ

IL

Latching current

-

120

-

mA

IH

Holding current

-

25

-

mA

t

Delay time

d

V

D

=

300V,

gate

source

=

15V,

15Ω

-

250 ns

t

Turn-off time (with antiparallel diode)

q

* Available to 1000V/µs.

I

T

=

50A,

square

wave

t

p

=

50µs,

T

j

=

120˚C,

-

dIR/dt = 50A/µs, dV/dt = 600V/µs to VDRM,

gate voltage at turn-off 3.5-4.5V. VR = -1V.

6.0

µs

2/7

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