SV15XX Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
SV15XX Datasheet PDF : 7 Pages
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SV15..F
SURGE RATINGS
Symbol
Parameter
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
Max. Units
3.0
kA
45 x 103 A2s
-
kA
-
A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Rth(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Mounting torque
Conditions
dc
Mounting torque 15Nm
with mounting compound
On-state (conducting)
Min. Max. Units
-
0.23 oC/W
-
0.02 oC/W
-
150
oC
-55 200
oC
12.0 15.0 Nm
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRRM
Peak reverse current
t
rr
Reverse recovery time
QRA1
Recovered charge (50% chord)
I
Reverse recovery current
RM
K
Soft factor
VTO
r
T
VFRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 450A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
IF = 450A, diRR/dt = 10A/µs
Tcase = 125oC, VR = 100V
At T = 150oC
vj
At Tvj = 150oC
di/dt = 1000A/µs, Tj = 125oC
Typ. Max. Units
-
1.6
V
-
20 mA
-
3.2 µs
-
35
µC
-
21
A
-
-
-
-
1.0
V
-
1.33 mΩ
-
-
V
2/7
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