MF70-1200 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
MF70-1200 Datasheet PDF : 8 Pages
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MF70
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I2t
I2t for fusing
Conditions
10ms half sine; with 100% V T = 125oC
RRM, j
10ms half sine; Tj = 125oC
Max.
700
2450
Units
A
A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R
th(j-c)
Rth(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Mounting torque
Conditions
dc
Mounting torque 3.5Nm
with mounting compound
Forward (conducting)
Reverse (blocking)
Use torque wrench
Min. Max. Units
-
0.37 oC/W
-
0.2 oC/W
-
125
oC
-
125
oC
-55 125 ˚C
3.2 3.8 Nm
CHARACTERISTICS
Symbol
Parameter
V
Forward voltage
FM
IRM
Peak reverse current
t
rr
Reverse recovery time
Qr
trr
V
TO
rT
VFRM
Recovered charge
Reverse recovery time
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 210A peak, T = 25oC
case
At VRRM, Tcase = 100oC
IF = 1A, diRR/dt = 25A/µs
Tcase = 25oC, VR = 100V
IF = 100A, diRR/dt = 100A/µs
Tcase = 25oC, VR = 100V
At Tvj = 125oC
At Tvj = 125oC
di/dt = 1000A/µs, Tj = 125oC
Typ. Max. Units
-
2.0
V
-
10 mA
-
300 ns
-
26
µC
-
915 ns
-
1.3
V
-
3.34 mΩ
80
-
V
2/8
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