DF25208 Ver la hoja de datos (PDF) - Dynex Semiconductor

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Fabricante

DF25208

Fast Recovery Diode

Dynex Semiconductor 

10000

1000

100

IF

∫ 50µs

QS = 0

tp = 1ms

dIR/dt

QS

IRR

Conditions:

Tj = 150˚C,

VR = 100V

IF = 200

IF = 100

IF = 2000

IF = 1000

IF = 500

DF252

10

1

10

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.3 Recovered charge

1000

Conditions:

Tj = 150˚C,

VR = 100V

100

IF = 2000A

IF = 1000A

IF = 500A

IF = 200A

IF = 100A

10

1

10

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.4 Typical reverse recovery current vs rate of fall of forward current

5/8

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