DF25210 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DF25210

Fast Recovery Diode

Dynex Semiconductor 

DF252

SURGE RATINGS

Symbol

Parameter

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

THERMAL AND MECHANICAL DATA

Symbol

Parameter

R

th(j-c)

Thermal resistance - junction to case

Rth(c-h) Thermal resistance - case to heatsink

T

vj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

Conditions

10ms half sine; with 0% V T = 150oC

RRM, j

10ms half sine; with 50% V T = 150oC

RRM, j

Max. Units

3.0

kA

45 x 103 A2s

2.4

kA

28.8 x 103 A2s

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 3.5kN

with mounting compound

Double side

Single side

On-state (conducting)

Min. Max. Units

-

0.07 oC/W

- 0.133 oC/W

- 0.147 oC/W

-

0.02 oC/W

-

0.04 oC/W

-

150

oC

-55 150

oC

3.0 4.0 kN

2/8

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