CNY17 Ver la hoja de datos (PDF) - Infineon Technologies
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CNY17 Datasheet PDF : 4 Pages
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Figure 6. Current transfer ratio versus
diode current (TA=50°C)
VCE=5.0 V, IC/IF=f (IF)
Figure 9. Transistor characteristics
(B=550) CNY17-3, -4 IC=f(VCE)
(TA=25°C, IF=0)
Figure 12. Collector emitter off-state
current ICEO=f (V, T) (TA=25°C, IF=0)
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2
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4
Figure 7. Current transfer ratio versus
diode current (TA=75°C) VCE=5.0 V
Figure 10. Output characteristics
CNY17-3, -4 (TA=25°C) IC=f(VCE)
Figure 13. Saturation voltage versus
collector current and modulation
depth CNY17-1 VCEsat=f (IC) (TA=25°C)
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3
4
Figure 8. Current transfer ratio versus
temperature (IF=10 mA, VCE=5.0 V)
IC/IF=f (T)
Figure 11. Forward voltage VF=f (IF)
Figure 14. Saturation voltage versus
collector current and modulation
depth CNY17-2 VCEsat=f (IC)
(TA=25°C)
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3
2
1
 2001 Inï¬neon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.inï¬neon.com/opto • 1-888-Inï¬neon (1-888-463-4636)
2–70
CNY17
February 24, 2000-20
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