CNY17 Ver la hoja de datos (PDF) - Infineon Technologies
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CNY17 Datasheet PDF : 4 Pages
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Current Transfer Ratio and Collector-Emitter Leakage Current by dash
number (TA=25°C)
-1
-2
-3
-4
Unit
IC/IF at VCE=5.0 V
(IF=10 mA)
IC/IF at VCE=5.0 V
(IF=1.0 mA)
Collector-Emitter
Leakage Current
(VCE=10 V) (ICEO)
40-80
63-125 100-200 160-320 %
30 (>13) 45 (>22) 70 (>34) 90 (>56) %
2.0 (≤ 50) 2.0 (≤ 50) 5.0 (≤ 100) 5.0 (≤ 100) nA
Figure 1. Linear Operation (without saturation)
IF
RL=75 Ω
IC
VCC=5 V
47 Ω
IF=10 mA, VCC=5.0 V, TA=25°C
Load Resistance
RL
75
W
Turn-On Time
tON
3.0
µs
Rise Time
tr
2.0
µs
Turn-Off Time
tOFF
2.3
µs
Fall Time
tf
2.0
µs
Cut-off Frequency
fCO
250
kHz
Figure 2. Switching Operation (with saturation)
IF
1 KΩ
VCC=5 V
47 Ω
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
-1
(IF=20 mA)
-2 and -3
(IF=10 mA)
-4
(IF=5.0 mA)
tON 3.0
4.2
6.0
µs
tf
2.0
3.0
4.6
µs
tOFF 18
23
25
µs
tf
11
14
15
µs
Figure 3. Current transfer ratio versus
diode current (TA=–25°C, VCE=5.0 V)
IC/IF=f (IF)
1
2
3
4
Figure 4. Current transfer ratio versus
diode current (TA=0°C, VCE=5.0 V)
IC/IF=f (IF)
1
2
3
4
Figure 5. Current transfer ratio versus
diode current (TA=25°C, VCE=5.0 V)
IC/IF=f (IF)
1
2
3
4
 2001 Inï¬neon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.inï¬neon.com/opto • 1-888-Inï¬neon (1-888-463-4636)
2–69
CNY17
February 24, 2000-20
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