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CNY17

TRIOS® Phototransistor Optocoupler

Infineon Technologies 

CNY17

TRIOS Phototransistor

Optocoupler

FEATURES

• High Current Transfer Ratio

CNY17-1, 40 to 80%

CNY17-2, 63 to 125%

CNY17-3, 100 to 200%

CNY17-4, 160 to 320%

• Breakdown Voltage, 5300 VRMS

• Field-Effect Stable by TRIOS—TRansparent

IOn Shield

• Long Term Stability

• Industry Standard Dual-in-Line Package

• Underwriters Lab File #E52744

•

V

DE

VDE #0884, Available with Option 1

DESCRIPTION

The CNY17 is an optically coupled pair consisting

of a Gallium Arsenide infrared emitting diode opti-

cally coupled to a silicon NPN phototransistor.

Signal information, including a DC level, can be trans-

mitted by the device while maintaining a high degree

of electrical isolation between input and output.

The CNY17 can be used to replace relays and trans-

formers in many digital interface applications, as well

as analog applications such as CRT modulation.

Maximum Ratings (TA=25°C)

Emitter

Reverse Voltage .............................................6.0 V

Forward Current .......................................... 60 mA

Surge Current (t≤10 µs)................................. 2.5 A

Power Dissipation......................................100 mW

Detector

Collector-Emitter Breakdown Voltage..............70 V

Emitter-Base Breakdown Voltage ...................7.0 V

Collector Current ......................................... 50 mA

Collector Current (t <1.0 ms)..................... 100 mA

Power Dissipation......................................150 mW

Package

Isolation Test Voltage (between emitter &

detector referred to climate DIN 50014,

part 2, Nov. 74) (t=1 sec)...................5300 VRMS

Creepage Distance ................................. ≥7.0 mm

Clearance Distance................................. ≥7.0 mm

Isolation Thickness between

Emitter and Detector............................. ≥0.4 mm

Comparative Tracking Index per DIN IEC 112/

VDE0303, part 1 ........................................... 175

Isolation Resistance

VIO=500 V, TA=25°C.............................. ≥1012 Ω

VIO=500 V, TA=100°C............................ ≥1011 Ω

Storage Temperature...................–55°C to +150°C

Operating Temperature ...............–55°C to +100°C

Junction Temperature...................................100°C

Soldering Temperature (max. 10 s, dip soldering:

distance to seating plane ≥1.5 mm) .........260°C

Dimensions in inches (mm)

321

.248 (6.30)

.256 (6.50)

pin one ID

Anode 1

Cathode 2

4 56

.335 (8.50)

.343 (8.70)

NC 3

.039

(1.00)

Min.

4°

typ.

.018 (0.45)

.022 (0.55)

.048 (1.22)

.022 (0.55)

.130 (3.30)

.150 (3.81)

.031 (0.80) min. 3°–9°

.031 (0.80)

.035 (0.90)

.100 (2.54) typ.

6 Base

5 Collector

4 Emitter

.300 (7.62)

typ.

18°

.010 (.25)

typ.

.300–.347

(7.62–8.81)

.114 (2.90)

.130 (3.0)

Characteristics (TA=25°C)

Parameter

Symbol

Emitter

Forward Voltage

VF

Breakdown Voltage

VBR

Reverse Current

IR

Capacitance

—

Thermal Resistance

Detector

Rthjamb

Capacitance

Thermal Resistance

Package

CCE

CCB

CEB

Rthjamb

Collector-Emitter

Saturation Voltage

Coupling Capacitance

VCEsat

CC

Values

Unit Condition

1.25

(≤1.65)

V

IF = 60 mA

≥6.0

0.01 (≤10) µA

IR = 10 mA

VR = 6.0 V

25

pF VR=0 V, f=1.0 MHz

750

K/W —

5.2

pF VCE=5.0 V, f=1.0 MHz

6.5

VCB=5.0 V, f=1.0 MHz

7.5

VEB=5.0 V, f=1.0 MHz

500

K/W —

0.25 (≤0.4) V

0.6

pF

IF =10 mA,

IC=2.5 mA

—

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–68

February 24, 2000-20

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