NTE56063 Ver la hoja de datos (PDF) - NTE Electronics
Número de pieza
componentes Descripción
Fabricante
NTE56063 Datasheet PDF : 2 Pages
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Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
MT2 (+), G (–)
MT2 (–), G (–)
Latching Current
MT2 (+), G (+)
MT2 (+), G (–)
MT2 (–), G (–)
Holding Current
On–State Voltage
Gate Trigger Voltage
Off–State Leakage Current
Dynamic Characteristics
IGT VD = 12V, IT = 0.1A, Note 2
IL
VD = 12V, IT = 0.1A
IH VD = 12V, IT = 0.1A
VT IT = 10A
VGT VD = 12V, IT = 0.1A
VD = 400V, IT = 0.1A, TJ = +125°C
ID
VD = VDRMmax, TJ = +125°C
Critical Rate–of–Rise of
Off–State Voltage
dVD/dt VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
Critical Rate–of–Change of
Commutating Current
dIcom/dt VDM = 400V, TJ = +95°C, ITRMS = 8A,
without Snubber, Gate Open
Gate Controlled Turn–On Time
Isolation Characteristics
tgt ITM = 12A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
RMS Isolation Voltage from All
3 Pins to External Heatsink
VISOL f = 50 – 60Hz, Sinusoidal Waveform,
R.H. ≤ 65%, Clean and Dustfree
Capacitance from T2 to
External Heatsink
CISOL f = 1MHz
Min Typ Max Unit
2 18 50 mA
2 21 50 mA
2 34 50 mA
– 31 60 mA
– 34 90 mA
– 30 60 mA
– 31 60 mA
– 1.3 1.65 V
– 0.7 1.5 V
0.25 0.4 –
V
– 0.1 0.5 mA
1000 4000 – V/µs
– 14 – A/ms
–
2
– µs
–
– 2500 V
– 10 – pF
Note 2. Device does not trigger in the MT2 (–), G (+) quadrant.
.181 (4.6) Max
.114 (2.9)
.252
(6.4)
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.622
(15.0)
Max
MT2
.118
(3.0)
Max
.531
(13.5)
Min
MT1
G
.098 (2.5)
.100 (2.54)
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