NTE5699 Ver la hoja de datos (PDF) - NTE Electronics
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NTE5699 Datasheet PDF : 3 Pages
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Electrical Characteristics: (TC = +25°C and either polarity of MT2 to MT1, unless otherwise specified)
Characteristics
Symbol Min Typ Max Unit
Peak Blocking Current
(Rated VDRM, Gate Open)
IDRM
TJ = +25°C
– – 10 µA
TJ = +125°C
– – 2 mA
Peak On–State Voltage
(ITM = 35A Peak; Peak Pulse Width ≤ 2ms,
Duty Cycle ≤ 2%)
VTM
– 1.4 1.85 V
Peak Gate Trigger Current
(Main Terminal Voltage = 12Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IGT
mA
– 20 50
– 20 50
– 20 50
– 30 75
Peak Gate Trigger Voltage
(Main Terminal Voltage = 12Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(Main Terminal Voltage = Rated VDRM, RL = 10kΩ,
TJ = +110°C)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
VGT
V
– 1.1 2.0
– 1.1 2.0
– 1.1 2.0
– 1.3 2.5
0.2 0.4 –
0.2 0.4 –
Holding Current
(Main Terminal Voltage = 12Vdc, Gate Open
IT = 200mA)
IH
– 10 50 mA
Turn–On Time
(Rated VDRM, ITM = 35A, IG = 120mA)
tgt
– 1.5 –
µs
Critical Rate of Rise of Off–State Voltage
(Rated VDRM, Exponential Waveform, TC = +125°C)
dv/dt – 40 – V/µs
Critical Rate of Rise of Commutation Voltage
dv/dt(c) – 5 – V/µs
(Rated VDRM, ITM = 35A, Commutating di/dt = 13.4A/ms,
Gate Unenergized, TC = +80°C)
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a
constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
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