DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NTE56067 Ver la hoja de datos (PDF) - NTE Electronics

Número de pieza
componentes Descripción
Fabricante
NTE56067 Datasheet PDF : 2 Pages
1 2
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
MT2 (+), G (–)
MT2 (–), G (–)
Latching Current
MT2 (+), G (+)
MT2 (+), G (–)
MT2 (–), G (–)
Holding Current
On–State Voltage
Gate Trigger Voltage
Off–State Leakage Current
Dynamic Characteristics
IGT VD = 12V, IT = 0.1A, Note 2
IL
VD = 12V, IT = 0.1A
IH VD = 12V, IT = 0.1A
VT IT = 20A
VGT VD = 12V, IT = 0.1A
VD = 400V, IT = 0.1A, TJ = +125°C
ID
VD = VDRMmax, TJ = +125°C
2 18 50 mA
2 21 50 mA
2 34 50 mA
– 31 60 mA
– 34 90 mA
– 30 60 mA
– 31 60 mA
– 1.2 1.5 V
– 0.7 1.5 V
0.25 0.4 –
V
– 0.1 0.5 mA
Critical Rate–of–Rise of
Off–State Voltage
dVD/dt VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
1000 4000 – V/µs
Critical Rate–of–Change of
Commutating Current
dIcom/dt VDM = 400V, TJ = +125°C, ITRMS = 16A, –
28
– A/ms
without Snubber, Gate Open
Gate Controlled Turn–On Time
tgt ITM = 12A, VD = VDRMmax, IG = 0.1A,
2
µs
dIG/dt = 5A/µs
Note 2. Device does not trigger in the MT2 (–), G (+) quadrant.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
MT2
.500
(12.7)
Max
.070 (1.78) Max
MT1
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]