HGT1S3N60C3DS(2000) Ver la hoja de datos (PDF) - Fairchild Semiconductor

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componentes Descripción

Fabricante

HGT1S3N60C3DS
(Rev.:2000)

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor 

HGTP3N60C3D, HGT1S3N60C3DS

Typical Performance Curves (Continued)

15

12

9

100oC

6

150oC

25oC

3

0

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VEC, FORWARD VOLTAGE (V)

FIGURE 18. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP

30

TC = 25oC, dIEC/dt = 200A/µs

25

trr

20

15

ta

10

tb

5

0

0.5

1

4

IEC, FORWARD CURRENT (A)

FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT

Test Circuit and Waveforms

RG = 82Ω

L = 1mH

RHRD460

+

VDD = 480V

-

FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT

VGE

VCE

ICE

90%

EOFF

10%

EON

90%

10%

td(OFF)I

tfI

trI

td(ON)I

FIGURE 21. SWITCHING TEST WAVEFORMS

©2001 Fairchild Semiconductor Corporation

HGTP3N60C3D, HGT1S3N60C3DS Rev. A

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