G7N60C Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
G7N60C Datasheet PDF : 8 Pages
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HGTD7N60C3S, HGTP7N60C3
Typical Performance Curves (Continued)
2000 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V
1000
VGE = 10V
500
VGE = 15V
3000
TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V
1000
500
VGE = 10V or 15V
100
40
2
5
8
11
14
17
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
200
TJ = 150oC, TC = 75oC
100
RG = 50Ω, L = 1mH
VGE = 10V
VGE = 15V
10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 2.1oC/W
1
2
10
20
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
1200
1000
800
CIES
FREQUENCY = 1MHz
600
400
200
0
0
CRES
COES
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
100
2
5
8
11
14
17
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
50
TJ = 150oC, VGE = 15V, RG = 50Ω, L = 1mH
40
30
20
10
0
0
100 200
300 400
500 600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
IG(REF) = 1.044mA, RL = 50Ω, TC = 25oC
600
15
500
400
VCE = 600V
12.5
10
300
7.5
200
5
VCE = 400V
100
VCE = 200V
2.5
0
0
0
5
10
15
20
25
30
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
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