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THBT200S Ver la hoja de datos (PDF) - STMicroelectronics

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THBT200S Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
®
Application Specific Discretes
A.S.D.
THBT200S
TRANSIENT VOLTAGE SUPPRESSOR
FOR SLIC PROTECTION
FEATURES
DUAL BIDIRECTIONALCROWBARPROTECTION.
PEAK PULSE CURRENT :
- IPP = 75 A, 10/1000 µs.
HOLDING CURRENT = 150 mA min
BREAKDOWN VOLTAGE = 200 V min.
BREAKOVER VOLTAGE = 290 V max.
MONOLITHIC DEVICE.
DESCRIPTION
This monolithic protection device has been espe-
cially designed to protect subscriber line cards.The
THBT200 device is particularly suitable to protect
ring generator relay against transient overvol-
tages.
SIP3
COMPLIESWITHTHE FOLLOWINGSTANDARDS:
CCITT K20 :
10/700 µs
5/310 µs
VDE 0433 :
10/700 µs
5/310 µs
VDE 0878 :
1.2/50 µs
1/20 µs
FCC part 68 :
2/10 µs
2/20µs
BELLCORE
TR-NWT-001089 :
2/10 µs
2/10µs
10/1000µs
10/1000µs
(*) with series resistors or PTC.
1kV
25A
2kV
50A
1.5kV
40A
2.5kV
225A (*)
2.5kV
225A (*)
1kV
75A (*)
SCHEMATIC DIAGRAM
NC
1
T ip
2
GND
3
R in g
4
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
February 1998 Ed: 2
1/7

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