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MMBF170LT1 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF170LT1/D
TMOS FET Transistor
N–Channel
DRAIN
3
MMBF170LT1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
— Continuous
m — Non–repetitive (tp ≤ 50 s)
Drain Current – Continuous
Pulsed
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBF170LT1 = 6Z
1
GATE
®
2
SOURCE
Symbol
Value
Unit
VDSS
60
Vdc
VDGS
60
Vdc
VGS
± 20
Vdc
VGSM
± 40
Vpk
ID
0.5
Adc
IDM
0.8
Symbol
PD
RqJA
TJ, Tstg
Max
225
1.8
556
– 55 to +150
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
m Drain–Source Breakdown Voltage (VGS = 0, ID = 100 A)
Gate–Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0)
ON CHARACTERISTICS (2)
V(BR)DSS
IGSS
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 200 mA)
On–State Drain Current (VDS = 25 Vdc, VGS = 0)
VGS(th)
rDS(on)
ID(off)
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Turn–Off Delay Time
W (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 )
Figure 1
1. FR– 5 = 1.0 0.75 0.062 in.
v v m 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
td(on)
td(off)
TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
REV 2
3
1
2
CASE 318 – 08, STYLE 21
SOT– 23 (TO – 236AB)
Min
Max
Unit
60
—
Vdc
—
10
nAdc
0.8
3.0
Vdc
—
5.0
W
—
0.5
mA
—
60
pF
—
10
ns
—
10
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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