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M62023 Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC

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M62023 Datasheet PDF : 4 Pages
1 2 3 4
MITSUBISHI <Dig./Ana.INTERFACE>
P R E L I M I N A R Y M62023L,P,FP NSootmicee:Tphairsamisentoritcalimfinitaslasrpeescuifibcjaetciot nto.
change.
SYSTEM
RESET
IC
WITH
SWITCH
FOR
MEMORY
BACK-UP
EXPLANATION OF TERMINALS
Pin No. Symbol
Name
Function
VIN and VBAT are controlled by means of an internal switch and output through
1
VOUT Power supply output VOUT.
The pin is capable of outputting up to 100 mA. Use it as VDD of CMOS RAM
and the like.
2
VBAT
Backup power supply Backup power supply is connected to this pin.
input
If a lithium battery is used, insert a resistor in series for safety purposes.
3
VIN Power supply input +3V input pin. Connect to a logic power supply.
4
Ct
Delay capacitor
connection pin
A delay capacitor is connected to this pin. By connecting a capacitor, it is
possible to delay each output.
5
RES Positive reset output Connect to the positive reset input of a microcontroller. The pin is capable of
flowing 1mA sink current.
6
GND Ground
Reference for all signals
Connect to the negative reset input of a microcontroller. The pin is capable of
7
RES Negative reset output flowing 1mA sink current.
Connect to the chip select of RAM. The CS output is at low level in normal state
thereby letting RAM be active. Under failure or backup condition, the CS
8
CS Chip select output
output is set to high level, then RAM enters standby state disabling read/write
function. The pin is capable of flowing a 1mA sink current.
APPLICATION EXAMPLE
+3V
(MAIN POWER SUPPLY) VIN
3
CIN
R1
VDD
R2
MCU
or
CPU
RES
7
5
RES
M62023
SW
D1
Com
RESET
CIRCUIT
1.24V
DELAY
CIRCUIT
GND
6
VOUT
1
VBAT BATTERY
2
3V
CS
8
Ct
4
Ct
COUT
VDD
CMOS
RAM
Capacitance to be connected: CIN: 10µF; COUT: 4.7µF; Ct: 4.7µF
( 3 / 4)
1997.5.30- rev

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