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MJF18009

SWITCHMODE™ NPN Silicon Planar Power Transistor

ON Semiconductor 

MJE18009 MJF18009

TYPICAL SWITCHING CHARACTERISTICS

160

400

IC = 3 A

TJ = 125°C

140

TJ = 25°C

IC = 3 A

IBoff = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 µH

120

300

100

80

IBoff = IC/2

60

VCC = 15 V

VZ = 300 V

40 LC = 200 µH

34 5 6

IC = 6.5 A

7 8 9 10 11 12 13 14 15

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

200

IC = 6.5 A

100

3

TJ = 125°C

TJ = 25°C

5

7

9

11

hFE, FORCED GAIN

13

15

Figure 14. Inductive Crossover Time

100

5 ms 1 ms

10

1

MJE18009-DC

TYPICAL CHARACTERISTICS

12

1 µs

10 µs

EXTENDED

8

SOA

TC ≤ 125°C

GAIN ≥ 4

LC = 500 µH

4

0.1

-5 V

MJF18009-DC

0.01

10

100

1000

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0

0V

-1.5 V

200

500

800

1100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Switching Safe

Operating Area

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