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MJ10009
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MJ10009 Datasheet PDF : 8 Pages
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ON Semiconductort
SWITCHMODEt Series
MJ10009 *
NPN Silicon Power Darlington
Transistor with Base-Emitter
Speedup Diode
The MJ10009 Darlington transistor is designed for high–voltage,
high–speed, power switching in Inductive circuits where fall time is
critical. It is particularly suited for line operated switchmode
*ON Semiconductor Preferred Device
20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
450 and 500 VOLTS
175 WATTS
applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
• Fast Turn–Off Times
1.6 µs (max) Inductive Crossover Time – 10 A, 100_C
3.5 µs (max) Inductive Storage Time – 10 A, 100_C
Operating Temperature Range –65 to +200_C
CASE 1–07
TO–204AA
(TO–3)
• 100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 100_C
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Symbol
VCEO
VCEX
VCEV
VEB
IC
ICM
IB
IBM
PD
TJ, Tstg
≈ 100 ≈ 15
Value
500
500
700
8
20
30
2.5
5
175
100
1
–65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol
RθJC
TL
Max
Unit
1
_C/W
275
_C
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 4
Publication Order Number:
MJ10009/D
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