MJE13003 Ver la hoja de datos (PDF) - KEC
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MJE13003 Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
MJE13003
TRIPLE DIFFUSED NPN TRANSISTOR
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
A
B
D
C
E
FEATURES
·Excellent Switching Times
: ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1A
·High Collector Voltage : VCBO=700V.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power
Dissipation
Ta=25℃
Tc=25℃
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
700
400
9
1.5
3
0.75
1.5
20
150
-55～150
UNIT
V
V
V
A
A
W
℃
℃
F
G
H
J
K
L
M
O
N
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Collector Output Capacitance
Transition Frequency
IEBO
ICBO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE(sat)
Cob
fT
VEB=9V, IC=0
VCB=700V, IE=0
VCE=2V, IC=0.5A
VCE=2V, IC=1A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
VCB=10V, f=0.1MHz, IE=0
VCE=10V, IC=0.1A
Turn-On Time
Storage Time
ton
300µS
IB1
INPUT
tstg
IB1
IB2
IB2
Fall Time
Note : hFE Classification
tf
IB1=IB2 =0.2A
DUTY CYCLE <= 2%
R:9～15, O:13～21, Y:20~38
OUTPUT
125Ω
VCC =125V
MIN.
-
-
9
5
-
-
-
-
-
-
4
-
TYP.
-
-
-
-
-
-
-
-
-
21
-
-
MAX.
10
10
38
-
0.5
1
3
1
1.2
-
-
1.1
UNIT
μA
μA
V
V
pF
MHz
μS
-
-
4.0
μS
-
-
0.7
μS
2009. 8. 19
Revision No : 10
1/2
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