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Número de pieza
componentes Descripción
CXK591000M-10LL Ver la hoja de datos (PDF) - Sony Semiconductor
Número de pieza
componentes Descripción
Fabricante
CXK591000M-10LL
131,072-word ×9-bit High Speed CMOS Static RAM
Sony Semiconductor
CXK591000M-10LL Datasheet PDF : 13 Pages
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CXK591000TM/YM/M
•
Write cycle (3) : CE2 control
Address
OE
CE1
CE2
WE
Data in
t
WC
t
AW
t
CW
t
AS
t
CW
t
WR1
(
∗
3
)
t
WP
t
DW
t
DH
Data valid
Data out
High impedance
∗
1
Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.
∗
2
Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.
∗
3
t
WR1
is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until the
end of the write cycle.
–8–
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