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BAV116W-13-F Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza
componentes Descripción
Fabricante
BAV116W-13-F
Diodes
Diodes Incorporated. Diodes
BAV116W-13-F Datasheet PDF : 4 Pages
1 2 3 4
BAV116W
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
@ t = 1.0s
@ t = 1.0ms
@ t = 1.0s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFRM
IFSM
Value
130
90
215
500
4.0
1.0
0.5
Unit
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
250
500
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Leakage Current (Note 6)
Total Capacitance
Reverse Recovery Time
Symbol Min
Typ
Max Unit
Test Condition
V(BR)R
130
130
V IR = 100µA
IR = 100µA, TJ =125°C
0.90
IF = 1.0mA, TJ = 25°C
1.0
IF = 10mA, TJ = 25°C
VF
1.1
V IF = 50mA, TJ = 25°C
1.25
1.0
IF = 150mA, TJ = 25°C
IF = 10mA, TJ = 125°C
IR
5.0
80
nA VR = 75V, TJ = 25°C
nA VR = 75V, TJ = 125°C
CT
2.4
5
pF VR = 0, f = 1.0MHz
trr
3.0
µs IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100
Notes:
5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect .
300
250
RJA = 500°C/W
1,000
100
200
10
150
100
50
1
0.1
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
BAV116W
Document number: DS30291 Rev. 12 - 2
2 of 4
www.diodes.com
March 2016
© Diodes Incorporated

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