DGT304SE Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DGT304SE Datasheet PDF : 13 Pages
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CHARACTERISTICS
T = 125oC unless stated otherwise
j
Symbol
Parameter
VTM
I
DM
IRRM
VGT
IGT
I
RGM
EON
td
tr
EOFF
tgs
tgf
tgq
QGQ
QGQT
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
DGT304SE13
Conditions
At 600A peak, IG(ON) = 2A d.c.
At = V , V = 2V
DRM
RG
At VRRM
VD = 24V, IT = 100A, Tj = 25oC
VD = 24V, IT = 100A, Tj = 25oC
V = 16V, No gate/cathode resistor
RGM
V
D
=
900V,
I
T
=
600A,
dI /dt
T
=
300A/µs
I
FG
=
20A,
rise
time
<
1.0µs
R
L
=
(Residual
inductance
3µH)
IT =600A, VDM = 750V
Snubber Cap Cs = 1.5µF,
diGQ/dt = 15A/µs
RL = (Residual inductance 3µH)
Min. Max. Units
-
2.2
V
-
25 mA
-
50 mA
-
0.9
V
-
1.0
A
-
50 mA
-
130 mJ
-
1.5
µs
-
3.0
µs
-
350 mJ
-
10
µs
-
11
µs
-
0.9
µs
-
700 µC
-
1400 µC
3/13
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