DGT304SE13(2004) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DGT304SE13 Datasheet PDF : 13 Pages
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CHARACTERISTICS
T = 125oC unless stated otherwise
j
Symbol
Parameter
VTM
IDM
IRRM
V
GT
I
GT
IRGM
EON
td
tr
E
OFF
ttail
tgs
tgf
tgq
Q
GQ
QGQT
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Tail time
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
DGT304SE
Conditions
At 600A peak, IG(ON) = 2A d.c.
At = VDRM, VRG = 2V
At VRRM
V = 24V, I = 100A, T = 25oC
D
T
j
V = 24V, I = 100A, T = 25oC
D
T
j
V = 16V, No gate/cathode resistor
RGM
VD = 900V, IT = 600A, dIT/dt = 300A/µs
IFG = 20A, rise time < 1.0µs
RL = (Residual inductance 3µH)
IT =600A, VDM = 750V
Snubber Cap Cs = 1.5µF,
diGQ/dt = 15A/µs
R
L
=
(Residual
inductance
3µH)
Min. Max. Units
-
2.2
V
-
25 mA
-
50 mA
-
0.9
V
-
1.0
A
-
50 mA
-
130 mJ
-
1.5
µs
-
3.0 µs
-
350 mJ
-
10
µs
-
11
µs
-
0.9
µs
-
11.9 µs
-
700 µC
- 1400 µC
3/13
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