DGT304SE13(2004) Ver la hoja de datos (PDF) - Dynex Semiconductor

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DGT304SE13
(Rev.:2004)

Gate Turn-off Thyristor

Dynex Semiconductor 

DGT304SE

SURGE RATINGS

Symbol

Parameter

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

di /dt

T

dVD/dt

Critical rate of rise of on-state current

Rate of rise of off-state voltage

Conditions

10ms half sine. Tj = 125oC

10ms half sine. Tj =125oC

VD = 60% VDRM, IT = 700A, Tj = 125oC, IFG > 20A,

Rise time < 1.0µs

To 80% VDRM; RGK ≤ 1.5Ω, Tj = 125oC

Max. Units

4.0

kA

80000 A2s

500

A/µs

500 V/µs

GATE RATINGS

Symbol

Parameter

VRGM

IFGM

PFG(AV)

PRGM

diGQ/dt

tON(min)

t

OFF(min)

Peak reverse gate voltage

Peak forward gate current

Average forward gate power

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissable on time

Minimum permissable off time

Conditions

This value maybe exceeded during turn-off

Min. Max. Units

-

16

V

-

50

A

-

10

W

-

6

kW

10

50 A/µs

20

-

µs

40

-

µs

THERMAL RATINGS

Symbol

Parameter

Conditions

Double side cooled

R

th(j-hs)

Rth(c-hs)

T

vj

TOP/Tstg

-

DC thermal resistance - junction to heatsink Anode side cooled

surface

Cathode side cooled

Contact thermal resistance

Clamping force 5.5kN

With mounting compound

Virtual junction temperature

Operating junction/storage temperature range

Clamping force

per contact

Min. Max. Units

- 0.075 oC/W

-

0.12 oC/W

-

0.20 oC/W

- 0.018 oC/W

-

125

oC

-40 125

oC

5.0 6.0 kN

2/13

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