DGT304SE13(2004) Ver la hoja de datos (PDF) - Dynex Semiconductor

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Fabricante

DGT304SE13
(Rev.:2004)

Gate Turn-off Thyristor

Dynex Semiconductor 

DGT304SE

Fig.28 Dependence of critical dVD/dt on gate-cathode

resistance and gate-cathode reverse voltage

0.9VD

VD

0.1VD

td tr

dIFG/dt

tgt

IFG

0.1IFG

VFG

tw1

0.9IT

dVD/dt

IT

VDP

ITAIL

tgs

tgf

tgq

Recommended gate conditions:-

VD VDM

ITCM = 700A

IFG = 20A

dIFG/dt = 20A/µs

IG(ON) = 2A d.c.

tw1(min) = 4.5µs

IGQM = 120A

dIGQ/dt = 15A/µs

QGQ = 700µc

VRG(min) = 2V

VRG(max) = 16V

These are recommended Dynex Semiconductor

conditions. Other conditions are permitted

according to users gate drive specifications.

IG(ON)

0.1IGQ

QGQ

0.5IGQM

IGQM

VRG

V(RG)BR

Fig.29 General switching waveforms

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