QEB373 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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componentes Descripción

Fabricante

QEB373

Subminiature Plastic Infrared Emitting Diode

Fairchild Semiconductor 

QEB373

Subminiature Plastic Infrared Emitting Diode

Features

■ T-3/4 (2mm) Surface Mount Package

■ Tape & Reel Option (See Tape & Reel Specifications)

■ Lead Form Options: Gullwing, Yoke, Z-Bend

■ Narrow Emission Angle, 24°

■ Wavelength = 875nm, AlGaAs

■ Clear Lens

■ Matched Photosensor: QSB363

■ High Radiant Intensity

November 2009

Package Dimensions

0.276 (7.0)

MIN

CATHODE

0.087 (2.2)

0.071 (1.8)

0.024 (0.6)

0.016 (0.4)

0.074 (1.9)

0.019 (0.5)

0.012 (0.3)

.118 (3.0)

.102 (2.6)

.059 (1.5)

.051 (1.3)

0.055 (1.4)

Schematic

0.008 (0.21)

0.004 (0.11)

0.024 (0.6)

0.106 (2.7)

0.091 (2.3)

CATHODE

Notes:

1. Dimensions are in inches (mm).

2. Tolerance of ±.010 (.25) on all non nominal dimensions unless otherwise specified.

©2009 Fairchild Semiconductor Corporation

QEB373 Rev. 1.0.1

www.fairchildsemi.com

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