1N5059(1998) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

1N5059
(Rev.:1998)

Silicon Mesa Rectifiers

Vishay Semiconductors 

3.0

VR = VR RM

2.5

half sinewave

2.0

RthJA=45K/W

l=10mm

1.5

1.0

0.5

RthJA=100K/W

PCB: d=25mm

0

0 20 40 60 80 100 120 140 160 180

15763

Tamb – Ambient Temperature ( °C )

Figure 3. Max. Average Forward Current vs.

Ambient Temperature

100

Tj = 175°C

10

Tj = 25°C

1

0.1

0.01

0.001

0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

15762

VF – Forward Voltage ( V )

Figure 4. Max. Forward Current vs. Forward Voltage

1N5059...1N5062

Vishay Telefunken

50

f=1MHz

40

30

20

10

0

0.1

1.0

10.0

100.0

15766

VR – Reverse Voltage ( V )

Figure 5. Typ. Diode Capacitance vs. Reverse Voltage

Dimensions in mm

Sintered Glass Case

SOD 57

Weight max. 0.5 g

Cathode Identification

∅ 3.6 max.

technical drawings

according to DIN

specifications

94 9538

∅ 0.82 max.

26 min.

Polarity: Cathode indicated by a band

Document Number 86000

Rev. 2, 24-Jun-98

4.2 max.

26 min.

www.vishay.de • FaxBack +1-408-970-5600

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