1N5059(1998) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
1N5059 Datasheet PDF : 4 Pages
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1N5059...1N5062
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Reverse breakdown voltage
Test Conditions
IF=1A
IF=2.5A
VR=VRRM
VR=VRRM, Tj=100°C
VR=VRRM, Tj=150°C
IR=100mA
Reverse recovery time
Diode capacitance
IF=0.5A, IR=1A, iR=0.25A
VR=0V, f=1MHz
Type
1N5059
1N5060
1N5061
1N5062
Symbol
VF
VF
IR
IR
IR
V(BR)R
V(BR)R
V(BR)R
V(BR)R
trr
CD
Min Typ Max Unit
1V
1.15 V
1 mA
10 mA
100 mA
225
1600 V
450
1600 V
650
1600 V
900
1600 V
4 ms
50
pF
Characteristics (Tj = 25_C unless otherwise specified)
200
VR = VRRM
160
RthJA=
45K/W
1N5062
120
100K/W
1N5061
160K/W
80
1N5060
40
1N5059
1000.0
100.0
VR = VRRM
10.0
1.0
0
25
15764
50 75 100 125 150 175
Tj – Junction Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
0.1
25
15765
50 75 100 125 150 175
Tj – Junction Temperature ( °C )
Figure 2. Max. Reverse Current vs.
Junction Temperature
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2 (4)
Document Number 86000
Rev. 2, 24-Jun-98
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