DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

S202SE1 Ver la hoja de datos (PDF) - Sharp Electronics

Número de pieza
componentes Descripción
Fabricante
S202SE1
Sharp
Sharp Electronics Sharp
S202SE1 Datasheet PDF : 4 Pages
1 2 3 4
S202SE1/S202SE2/S216SE1/S216SE2
s Electrical Characteristics
Parameter
Input
Forward voltage
Reverse current
Repetitive peak OFF-state current
ON-state voltage
S202SE1 / S202SE2
S216SE1 / S216SE2
Output Holding current
Critical rate of rise of OFF-state voltage
Critical rate of rise of commutating OFF-state voltage
Zero-cross voltage S202SE2 / S216SE2
Transfer
charac-
teristics
Minimum trigger
current
S202SE1 / S216SE1
S202SE2 / S216SE2
Isolation resistance
Turn-on time
S202SE1 / S216SE1
S202SE2 / S216SE2
Turn-off time
Thermal resistance
(Between junction and case)
S202SE1 / S202SE2
S216SE1 / S216SE2
Thermal resistance
(Between junction and ambience )
*6 dIT /dt = - 4.0A/ms (S202SE1 / S202SE2 )
dIT /dt = - 8.0A/ms (S216SE1 / S216SE2 )
Symbol
VF
IR
I DRM
VT
IH
dV/dt
( dV/dt )c
V OX
I FT
R ISO
t on
t off
R th(j - c)
R th(j - a)
Conditions
IF = 20mA
VR = 3V
V D = V DRM
IT = 2A rms
IT = 16A rms
-
V D = 2/3V DRM
Tj = 125˚C, VD = 400V *6
IF = 8mA
VD = 12V, R L = 30
VD = 6V, R L = 30
DC500V, 40 to 60 % RH
AC60Hz
AC60Hz
-
-
MIN.
-
-
-
-
-
-
30
5
-
-
-
1010
-
-
-
-
-
-
TYP.
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.5
3.3
40
(Ta = 25˚C )
MAX.
1.4
10 -4
10 -4
1.5
1.5
50
-
-
35
8
8
-
1
9.3
9.3
-
-
Unit
V
A
A
V rms
mA
V/ µ s
V/ µ s
V
mA
ms
ms
˚C/W
-
˚C/W
Fig.1-a RMS ON-state Current vs. Ambient
Temperature
(S202SE1 / S202SE2 )
4
3
2
1
0
- 20 0 20 40 60 80 100 120 140
Ambient temperature T a (˚C)
Fig.1-b RMS ON-state Current vs.
Ambient Temperature
(S216SE1 / S216SE2 )
4
3
2
1
0
- 20 0
20 40 60 80 100 120 140
Ambient temperature T a (˚C)

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]