L9230-DIE1 Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

L9230-DIE1

SPI CONTROLLED H-BRIDGE

STMicroelectronics 

L9230

ELECTRICAL CHARACTERISTCS ( Tj = -40 to +150°C; VS = 5 to 28V) (continued)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Logic inputs

VI

Logic Input Voltage

IN1, IN2, DI, EN

1

1.5

2

V

II

Logic Input Current

IN1, IN2, DI

VI ≤ 1V

-200 -125

µA

IEN Input Current EN

VIEN ≥ 2V

75

100

µA

tdt Detection Time EN, DI

3

4

µs

Power Outputs (OUT1, OUT2)

RS Switch on Resistance LS

ROUT-Vs, VS > 5 V

150 250 mΩ

Switch on Resistance HS

ROUT-GND, VS > 5 V

150 250 mΩ

Current Limitation

Peak value controlled

inductive load L = 0,8 to 5 mH

resistive load R = 0,8 to 1.8 Ω

|IOU|max Switch-off Current

|IOU|max

-40 °C < Tj < 165 °C

Tj < 175 °C

5.5

6

7.7

A

2.5

A

ta

Switch-off time (2)

12

17

22

µs

tb

Blanking time (2)

8

11.5

15

µs

ta/tb Tracking (2)

1.4

1.5

1.6

|IOUK| Short circuit detection current (1) see figure 1

5.5

11

A

∆|IOUK| Short Circuit Current Trecking (1)

1600

mA

t

Reactivation time after internal Overcurrent- or overtemperature

shut down (2)

shut down to reactivation of the

output stage

1

ms

IL

Leakage Current

Output stage switched off

1

mA

VFD Free-wheel diode forward voltage IO = 3A, VS = 0V

2

V

trr

Free-wheel diode reverse

recovery time (2)

100

ns

VSFHigh Output„high“ (SF not set) (*)

VS = 5V, RPull_up = 27KΩ

4.1

V

|Iou| max Switch OFF Current

Tj = -40 to 165°C

Tj = < 175°C

6

A

2.5

A

ISF Output„high“ (SF not set) (2)

VSF = 5V

20

µA

ISF Output„low“ (SF set) (3 )

VSF = 1V

VSF = 0.5V

300

µA

100

µA

VSF = 0.8V

500

µA

4/25

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