Philips Semiconductors
Sound fader control circuit
for car radios
Preliminary specification
TEA6330T
CHARACTERISTICS
VP = 8.5 V; load resistors at audio outputs 10 kΩ, fi = 1 kHz (RS = 600 Ω), bass and treble in linear position, fader in off
position and Tamb = 25 °C; measurements taken in Fig.1 unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VP
supply voltage range (pin 18)
IP
supply current
Vref
reference voltage (pin 20)
VO
DC voltage at output (pins 7, 8, 13, 14)
Measurements over all
7
−
0.45 VP
−
8.5
26
0.5 VP
0.5 VP
10
V
−
mA
0.55 VP V
−
V
Vi
maximum AF input level for THD = 2 % Gv = −66 to −6 dB
at pins 2 and 19 (RMS value)
and VP = 8.1 V
2
−
−
V
Vo
maximum AF output level for THD = 2% Gv = −4 to +20 dB
at pins 7, 8, 13, 14 (RMS value)
and VP = 8.1 V
1.1
−
−
V
Gv
maximum gain by volume setting
19
20
21
dB
B
frequency response
−1 dB roll-off frequency
35 to
−
20000 −
Hz
αCR
THD
crosstalk attenuation
total harmonic distortion
f = 250 to 10000 Hz
Gv = 0 dB
70
90
−
dB
f = 20 to 12500 Hz
Vi (RMS) = 50 mV
Vi (RMS) = 500 mV
Vi (RMS) = 1.6 V
Gv = +20 dB
Gv = 0 dB
Gv = −10 dB
−
0.1
0.3
%
−
0.05
0.2
%
−
0.2
0.5
%
RR
ripple rejection for VR < 200 mV RMS Gv = 0 dB
f = 100 Hz
−
70
−
dB
f = 40 Hz to 3 kHz
−
60
−
dB
f = 3 to 12.5 kHz
−
50
−
dB
PN
noise power at output of a 25 W
powerstage with 26 dB gain
(only contribution of TEA6330T)
mute position
(V9 = 0)
−
−
10
nW
αBUS
crosstalk attenuation between SDA, SCL
and signal output
Gv = 0 dB
(20 log VBUS (p-p)/Vo RMS)
−
110
−
dB
S/N(W) weighted signal-to-noise ratio for
CCIR 468-2 quasi
peak for 6 W power
amplifier
Vi = 50 mV RMS
Vi = 500 mV RMS
Vi = 50 mV RMS
Vi = 500 mV RMS
Vi = 50 mV RMS
Vi = 500 mV RMS
Po = 50 mW
Po = 50 mW
Po = 1 W
Po = 1 W
Po = 6 W; Fig.9
Po = 6 W; Fig.9
−
65
−
dB
−
67
−
dB
65
72
−
dB
71
78
−
dB
−
72
−
dB
−
86
−
dB
January 1992
6