T830W Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
T830W Datasheet PDF : 5 Pages
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T820W / T830W
Fig. 5: Surge peak on-state current versus number
of cycles.
ITSM(A)
110
100
90
Non repetitive
80
Tj initial=25°C
70
60
50
Repetitive
40
Tc=100°C
30
20
10
0
1
Number of cycles
10
100
t=20ms
1000
Fig. 6: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponding value of I2t.
ITSM(A), I2t(A2s)
1000
Tj initial=25°C
100
dI/dt limitation:
50A/µs
ITSM
I²t
10
0.01
tp(ms)
0.10
1.00
10.00
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus junc-
tion temperature (typical values).
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25°C]
3.0
2.5
2.0
IGT
1.5
1.0
IH & IL
0.5
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 8: Relative variation of critical rate of decrease
of main current versus reapplied dV/dt (typical val-
ues).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
dV/dt (V/µs)
0.0
0.1
1.0
10.0
100.0
Fig. 9: Relative variation of critical rate of decrease
of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
8
7
6
5
4
3
2
1
Tj(°C)
0
0
25
50
75
100
125
4/5
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