BTS650PE3180A Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BTS650PE3180A

Smart Highside High Current Power Switch

Infineon Technologies 

Data Sheet BTS650P

Input circuit (ESD protection)

Current sense status output

V

ZD

Z,IN

V bIN

IN

I

IN

V bb

R bb

Vbb

R bb

ZD

IIS

V

Z,IS

IS

VIS

R

IS

V IN

When the device is switched off (IIN = 0) the voltage

between IN and GND reaches almost Vbb. Use a

mechanical switch, a bipolar or MOS transistor with

appropriate breakdown voltage as driver.

VZ,IN = 66 V (typ).

Short circuit detection

Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)

(80 ...350 µs).

+ Vbb

VON

Logic

unit

Short circuit

detection

OUT

VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n

devices are connected in parallel). IS = IL/kilis can be

driven only by the internal circuit as long as Vout - VIS >

5 V. If you want measure load currents up to IL(M), RIS

should

be

less

than

Vbb -

IL(M) /

5V

Kilis.

Note: For large values of RIS the voltage VIS can reach

almost Vbb. See also over voltage protection.

If you don't use the current sense output in your

application, you can leave it open.

Inductive and over voltage output clamp

+ Vbb

VZ1

VON

VZG

IS

DS

OUT

PROFET

VOUT

VON is clamped to VON(Cl) = 42 V typ. At inductive load

switch-off without DS, VOUT is clamped to VOUT(CL) =

-19 V typ. via VZG. With DS, VOUT is clamped to Vbb -

VON(CL) via VZ1. Using DS gives faster deenergizing of

the inductive load, but higher peak power dissipation in

the PROFET. In case of a floating ground with a

potential higher than 19V referring to the OUT –

potential the device will switch on, if diode DS is not

used.

Infineon Technologies AG

Page 8

2003-Oct-01

Share Link: