BTS650PE3180A Ver la hoja de datos (PDF) - Infineon Technologies

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BTS650PE3180A

Smart Highside High Current Power Switch

Infineon Technologies 

Data Sheet BTS650P

Parameter and Conditions

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified

Symbol

Protection Functions 16)

Short circuit current limit (Tab to pins 1, 2, 6, 7)

VON = 12 V, time until shutdown max. 350 µs Tc =-40°C:

Tc =25°C:

Tc =+150°C:

Short circuit shutdown delay after input current

positive slope, VON > VON(SC)

min. value valid only if input "off-signal" time exceeds 30 µs

Output clamp 17)

(inductive load switch off)

IL= 40 mA:

see diagram Ind. and overvolt. output clamp page 8

Output clamp (inductive load switch off)

at VOUT = Vbb - VON(CL) (e.g. over voltage)

IL= 40 mA

Short circuit shutdown detection voltage

(pin 4 to pins 1,2,6,7)

Thermal overload trip temperature

Thermal hysteresis

IL(SC)

IL(SC)

IL(SC)

td(SC)

-VOUT(CL)

VON(CL)

VON(SC)

Tjt

∆Tjt

Reverse Battery

Reverse battery voltage 18)

On-state resistance (Pins 1 ,2 ,6 ,7 to pin 4) Tj = 25 °C:

Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 kΩ Tj = 150 °C:

Integrated resistor in Vbb line

-Vbb

RON(rev)

Rbb

Values

Unit

min typ max

-- 110 --

A

-- 130 180

65 115 --

80

-- 350 µs

14 16.5 20 V

39 42 47 V

--

6

150

--

-- 10

-- V

-- °C

-- K

--

-- 16 V

-- 5.4 7.0 mΩ

8.9 12.3

-- 120

-- Ω

16) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not

designed for continuous repetitive operation.

17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode

is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.

18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as

it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor

is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic

drain-source diode. The temperature protection is not active during reverse current operation! Increasing

reverse battery voltage capability is simply possible as described on page 9.

Infineon Technologies AG

Page 5

2003-Oct-01

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