BTS650PE3180A Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

BTS650PE3180A

Smart Highside High Current Power Switch

Infineon Technologies 

Data Sheet BTS650P

Parameter and Conditions

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified

Symbol

Inverse Load Current Operation

On-state resistance (Pins 1, 2, 6, 7 to pin 4)

VbIN = 12 V, IL = - 20 A

Tj = 25 °C:

see diagram on page 10

Tj = 150 °C:

Nominal inverse load current (Pins 1, 2, 6, 7 to Tab)

VON = -0.5 V, Tc = 85 °C11

Drain-source diode voltage (Vout > Vbb)

IL = - 20 A, IIN = 0, Tj = +150°C

RON(inv)

IL(inv)

-VON

Operating Parameters

Operating voltage (VIN = 0V) 13)

Under voltage shutdown 14)

Under voltage start of charge pump

see diagram page 15

Over voltage protection 15)

Ibb = 15 mA

Tj =-40°C:

Tj = 25...+150°C:

Standby current

IIN = 0

Tj =-40...+25°C:

Tj = 150°C:

Vbb(on)

VbIN(u)

VbIN(ucp)

VZ,IN

Ibb(off)

Values

Unit

min typ max

-- 4.4 6.0 mΩ

7.9 10.5

55 70

-- A

-- 0.6

-- V

5.0

-- 34 V

1.5 3.0 4.5 V

3.0 4.5 6.0 V

60

--

-- V

62 66

--

-- 15 25 µA

-- 25 50

13) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).

For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.

14) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V

(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.

15) See also VON(CL) in circuit diagram on page 9.

Infineon Technologies AG

Page 4

2003-Oct-01

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